Datasheet > 晶体管 > 射频小信号场效应晶体管> NE25139T1U73

NE25139T1U73

更新时间： 2024-02-24 01:18:55

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管栅放大器
页数	文件大小	规格书
7页	57K
描述
GENERAL PURPOSE DUAL-GATE GaAS MESFET

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NE25139T1U73 技术参数

生命周期：	Obsolete	零件包装代码：	SOT-143
包装说明：	SMALL OUTLINE, R-PDSO-G4	针数：	4
Reach Compliance Code：	unknown	HTS代码：	8541.21.00.75
风险等级：	5.82	Is Samacsys：	N
配置：	SINGLE	最小漏源击穿电压：	13 V
最大漏极电流 (Abs) (ID)：	0.035 A	最大漏极电流 (ID)：	0.035 A
FET 技术：	METAL SEMICONDUCTOR	最大反馈电容 (Crss)：	0.03 pF
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G4
元件数量：	1	端子数量：	4
工作模式：	DEPLETION MODE	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
功耗环境最大值：	0.2 W	最小功率增益 (Gp)：	16 dB
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	GALLIUM ARSENIDE	Base Number Matches：	1

NE25139T1U73 数据手册

GENERAL PURPOSE

DUAL-GATE GaAS MESFET

NE25139

FEATURES

POWER GAIN AND NOISE FIGURE vs.

DRAIN TO SOURCE VOLTAGE

•

SUITABLE FOR USE AS RF AMPLIFIER IN

UHF TUNER

GPS

•

LOW CRSS: 0.02 pF (TYP)

HIGH GPS: 20 dB (TYP) AT 900 MHz

LOW NF: 1.1 dB TYP AT 900 MHz

LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

ION IMPLANTATION

VG2S = 1 V

VG2S = 0.5 V

VG2S = 2 V

ID = 10 mA

f = 900 MHz

AVAILABLE IN TAPE & REEL OR BULK

DESCRIPTION

Drain to Source Voltage, VDS (V)

The NE251 is a dual gate GaAs FET designed to provide

flexibility in its application as a mixer, AGC amplifier, or low

noise amplifier. As an example, by shorting the second gate

tothesource, highergaincanberealizedthanwithsinglegate

MESFETs. This device is available in a mini-mold (surface

mount) package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE25139

PACKAGE OUTLINE

SYMBOL

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,

f = 900 MHz

1.1

2.5

GPS

Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,

f = 900 MHz

BVDSX

Drain to Source Breakdown Voltage at VG1S = -4 V,

VG2S = 0, ID = 10 µA

IDSS

Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V

VG1S (OFF)

Gate 1 to Source Cutoff Voltage at VDS = 5 V,

VG2S = 0 V, ID = 100 µA

-3.5

VG2S (OFF)

Gate 2 to Source Cutoff Voltage at VDS = 5 V,

VG1S = 0 V, ID = 100 µA

IG1SS

IG2SS

|YFS|

Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0

Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0

µA

Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,

ID = 10 mA, f = 1.0 kHz

1.0

1.5

CISS

Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,

f = 1 MHz

0.5

CRSS

Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,

ID = 10 mA, f = 1 MHz

0.02

0.03

California Eastern Laboratories

12 3 4 5 6 7

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NE25139T2U73	CEL	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars	获取价格
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