是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.78 | Is Samacsys: | N |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 3.5 A | 最大漏极电流 (ID): | 3.5 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 10 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 90 ns | 最大开启时间(吨): | 55 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDS9945/D84Z | TI |
获取价格 |
3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | |
NDS9945/L86Z | TI |
获取价格 |
3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | |
NDS9945/L99Z | TI |
获取价格 |
3500mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDS9945/S62Z | TI |
获取价格 |
3500mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDS9945_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
NDS9945D84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
NDS9945L86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
NDS9945L99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
NDS9945S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta | |
NDS9945-TR | FAIRCHILD |
获取价格 |
暂无描述 |