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NDS9948_02 PDF预览

NDS9948_02

更新时间: 2024-09-27 03:46:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
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5页 142K
描述
Dual 60V P-Channel PowerTrench MOSFET

NDS9948_02 数据手册

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May 2002  
NDS9407  
60V P-Channel PowerTrench MOSFET  
General Description  
Features  
This P-Channel MOSFET is a rugged gate version of  
Fairchild Semiconductor’s advanced PowerTrench  
process. It has been optimized for power management  
applications requiring a wide range of gate drive voltage  
ratings (4.5V – 20V).  
–3.0 A, –60 V. RDS(ON) = 150 m@ VGS = –10 V  
DS(ON) = 240 m@ VGS = –4.5 V  
R
Low gate charge  
Fast switching speed  
Applications  
Power management  
Load switch  
High performance trench technology for extremely  
low RDS(ON)  
Battery protection  
High power and current handling capability  
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8  
S
S
S
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
–60  
V
V
A
VGSS  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±20  
–3.0  
ID  
(Note 1a)  
–12  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
PD  
W
1.2  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1c)  
50  
125  
25  
RθJA  
°C/W  
Thermal Resistance, Junction-to-Case  
(Note 1)  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
NDS9407  
NDS9407  
13’’  
12mm  
2500 units  
NDS9407 Rev B1(W)  
2002 Fairchild Semiconductor Corporation  

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