Datasheet > NDS9948_10

NDS9948_10

更新时间： 2024-11-15 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	265K
描述
Dual 60V P-Channel PowerTrenchï MOSFET

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NDS9948_10 数据手册

January 2010

NDS9948

Dual 60V P-Channel PowerTrench MOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

• –2.3 A, –60 V

R_DS(ON)= 250 mΩ @ V_GS= –10 V

R_DS(ON)= 500 mΩ @ V_GS= –4.5 V

• Low gate charge (9nC typical)

• Fast switching speed

Applications

•

Power management

Load switch

• High performance trench technology for extremely

low R_DS(ON)

Battery protection

• High power and current handling capability

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–60

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

–2.3

–10

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

1.0

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

135

R_θJA

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

NDS9948

13’’

12mm

2500 units

NDS9948 Rev B1(W)

2010 Fairchild Semiconductor Corporation

12 3 4 5 6

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