NDS9945-TR

更新时间： 2024-09-28 13:11:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲光电二极管 PC
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中文翻译

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NDS9945-TR 数据手册

May 1998

NDS9945

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

3.5 A, 60 V. R_DS(ON)= 0.100 W @ V_GS= 10 V,

SO-8 N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to provide superior switching

performance and minimize on-state resistance. These

devices are particularly suited for low voltage applications

such as disk drive motor control, battery powered circuits

where fast switching, low in-line power loss, and resistance

to transients are needed.

R_DS(ON)= 0.200 W @ V_GS= 4.5 V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package.

SuperSOT^TM-6

SuperSOT^TM-8

SOIC-16

SOT-23

SO-8

SOT-223

SO-8

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol Parameter

NDS9945

Units

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

3.5

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

(Note 1b)

(Note 1c)

0.9

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

R_q_JA

R_q_JC

(Note 1)

NDS9945 Rev.B

12 3 4 5 6 7 8

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