5秒后页面跳转
NDS9947_02 PDF预览

NDS9947_02

更新时间: 2024-11-15 03:46:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 141K
描述
Dual 20V P-Channel PowerTrench MOSFET

NDS9947_02 数据手册

 浏览型号NDS9947_02的Datasheet PDF文件第2页浏览型号NDS9947_02的Datasheet PDF文件第3页浏览型号NDS9947_02的Datasheet PDF文件第4页浏览型号NDS9947_02的Datasheet PDF文件第5页 
May 2002  
NDS9947  
Dual 20V P-Channel PowerTrench MOSFET  
General Description  
Features  
This P-Channel MOSFET is a rugged gate version of  
Fairchild Semiconductor’s advanced PowerTrench  
process. It has been optimized for power management  
applications requiring a wide range of gate drive voltage  
ratings (–4.5V to – 20V).  
–3.5 A, –20 V  
RDS(ON) = 100 m@ VGS = –10 V  
RDS(ON) = 190 m@ VGS = –4.5 V  
Low gate charge  
Fast switching speed  
Applications  
Power management  
Load switch  
High performance trench technology for extremely  
low RDS(ON)  
Battery protection  
High power and current handling capability  
D1  
5
6
7
8
4
3
2
1
D1  
D2  
Q1  
Q2  
D2  
G1  
SO-8  
S1  
G2  
S2  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
V
A
20  
±20  
VGSS  
Gate-Source Voltage  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
3.5  
15  
2
PD  
W
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
1.6  
1.0  
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
°C  
55 to +175  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1c)  
78  
135  
40  
RθJA  
°C/W  
Thermal Resistance, Junction-to-Case  
(Note 1)  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
NDS9947  
NDS9947  
13’’  
12mm  
2500 units  
NDS9947 Rev B(W)  
2002 Fairchild Semiconductor Corporation  

与NDS9947_02相关器件

型号 品牌 获取价格 描述 数据表
NDS9947_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Meta
NDS9947D84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Meta
NDS9947L86Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Meta
NDS9947L99Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Meta
NDS9947S62Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Meta
NDS9947X TI

获取价格

3.5A, 20V, 0.1ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8
NDS9948 FAIRCHILD

获取价格

Dual P-Channel Enhancement Mode Field Effect Transistor
NDS9948 ONSEMI

获取价格

双 P 沟道,PowerTrench® MOSFET,60V,-2.3A,250mΩ
NDS9948/D84Z TI

获取价格

2.3A, 60V, 0.25ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
NDS9948/L86Z TI

获取价格

2.3A, 60V, 0.25ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET