NDP03N60Z

更新时间： 2024-09-20 05:52:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	159K
描述
N-Channel Power MOSFET 600 V, 3.3

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NDP03N60Z 数据手册

NDF03N60Z, NDP03N60Z,

NDD03N60Z

N-Channel Power MOSFET

600 V, 3.3 W

Features

http://onsemi.com

• Low ON Resistance

• Low Gate Charge

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

(TYP) @ 1.2 A

DS(on)

DSS

600 V

3.3 W

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

NDF

NDP

600

3.0

NDD

Unit

N−Channel

D (2)

Drain−to−Source Voltage

DSS

Continuous Drain Current

3.0

(Note 1)

2.6

1.65

Continuous Drain Current

1.9

(Note 1)

1.9

T = 100°C

G (1)

Pulsed Drain Current, V

@ 10 V

(Note 1)

Power Dissipation R

S (3)

Gate−to−Source Voltage

Single Pulse Avalanche

100

Energy, I = 3.0 A

ESD (HBM)

3000

esd

(JESD 22−A114)

RMS Isolation Voltage (t =

ISO

4500

0.3 sec., R.H. ≤ 30%,

T = 25°C) (Figure 17)

Peak Diode Recovery

dv/dt

4.5 (Note 2)

3.0

V/ns

Continuous Source Current

(Body Diode)

DPAK

CASE 369AA

STYLE 2

TO−220FP TO−220AB

CASE 221D CASE 221ACASE 369D

STYLE 1 STYLE 5

STYLE 2

IPAK

Maximum Temperature for

Soldering Leads

260

°C

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

stg

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

2. I = 3.0 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

Publication Order Number:

April, 2010 − Rev. 3

NDF03N60Z/D

12 3 4 5 6 7...10

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