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NDP04N62Z PDF预览

NDP04N62Z

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安森美 - ONSEMI /
页数 文件大小 规格书
9页 150K
描述
N-Channel Power MOSFET 620 V, 1.8 

NDP04N62Z 数据手册

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NDF04N62Z, NDP04N62Z,  
NDD04N62Z  
N-Channel Power MOSFET  
620 V, 1.8 W  
Features  
http://onsemi.com  
Low ON Resistance  
Low Gate Charge  
100% Avalanche Tested  
V
R
(TYP) @ 2 A  
DS(ON)  
DSS  
These Devices are PbFree and RoHS Compliant  
620 V  
1.8 Ω  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
NChannel  
Parameter  
Symbol  
V
NDF  
NDP  
620  
NDD Unit  
D (2)  
DraintoSource Voltage  
V
DSS  
Continuous Drain Current  
R
I
4.4  
(Note 2)  
4.4  
4.1  
2.6  
16  
A
D
q
JC  
Continuous Drain Current  
I
D
2.8  
(Note 2)  
2.8  
18  
96  
A
R
q
JC  
, T = 100°C  
A
G (1)  
Pulsed Drain Current,  
@ 10V  
I
18  
(Note 2)  
A
DM  
V
GS  
S (3)  
Power Dissipation R  
(Note 1)  
P
D
28  
83  
W
q
JC  
GatetoSource Voltage  
V
GS  
30  
V
Single Pulse Avalanche  
E
AS  
120  
mJ  
Energy, I = 4.0 A  
D
ESD (HBM) (JESD22A114)  
V
3000  
V
V
esd  
4
RMS Isolation Voltage  
V
ISO  
4500  
(t = 0.3 sec., R.H. 30%,  
4
T = 25°C) (Figure 14)  
A
2
1
Peak Diode Recovery  
dv/dt  
4.5 (Note 3)  
4.0  
V/ns  
A
1
1
2
1
2
3
2
3
3
Continuous Source Current  
(Body Diode)  
I
S
3
DPAK  
TO220FP TO220AB  
IPAK  
CASE 369AA  
STYLE 2  
CASE 221D CASE 221A  
STYLE 1  
CASE 369D  
STYLE 5  
STYLE 2  
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for  
10 s Package Body for 10 s  
T
300  
260  
°C  
L
T
PKG  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Operating Junction and  
Storage Temperature Range  
T , T  
55 to 150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1sq. pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
2. Limited by maximum junction temperature  
3. I = 4.0 A, di/dt 100 A/ms, V BV  
, T = +150°C  
J
SD  
DD  
DSS  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 Rev. 1  
NDF04N62Z/D  
 

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