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NDP04N62ZG

更新时间: 2024-11-10 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 150K
描述
N-Channel Power MOSFET 620 V, 1.8 

NDP04N62ZG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:620 V最大漏极电流 (ID):4.4 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):18 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NDP04N62ZG 数据手册

 浏览型号NDP04N62ZG的Datasheet PDF文件第2页浏览型号NDP04N62ZG的Datasheet PDF文件第3页浏览型号NDP04N62ZG的Datasheet PDF文件第4页浏览型号NDP04N62ZG的Datasheet PDF文件第5页浏览型号NDP04N62ZG的Datasheet PDF文件第6页浏览型号NDP04N62ZG的Datasheet PDF文件第7页 
NDF04N62Z, NDP04N62Z,  
NDD04N62Z  
N-Channel Power MOSFET  
620 V, 1.8 W  
Features  
http://onsemi.com  
Low ON Resistance  
Low Gate Charge  
100% Avalanche Tested  
V
R
(TYP) @ 2 A  
DS(ON)  
DSS  
These Devices are PbFree and RoHS Compliant  
620 V  
1.8 Ω  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
NChannel  
Parameter  
Symbol  
V
NDF  
NDP  
620  
NDD Unit  
D (2)  
DraintoSource Voltage  
V
DSS  
Continuous Drain Current  
R
I
4.4  
(Note 2)  
4.4  
4.1  
2.6  
16  
A
D
q
JC  
Continuous Drain Current  
I
D
2.8  
(Note 2)  
2.8  
18  
96  
A
R
q
JC  
, T = 100°C  
A
G (1)  
Pulsed Drain Current,  
@ 10V  
I
18  
(Note 2)  
A
DM  
V
GS  
S (3)  
Power Dissipation R  
(Note 1)  
P
D
28  
83  
W
q
JC  
GatetoSource Voltage  
V
GS  
30  
V
Single Pulse Avalanche  
E
AS  
120  
mJ  
Energy, I = 4.0 A  
D
ESD (HBM) (JESD22A114)  
V
3000  
V
V
esd  
4
RMS Isolation Voltage  
V
ISO  
4500  
(t = 0.3 sec., R.H. 30%,  
4
T = 25°C) (Figure 14)  
A
2
1
Peak Diode Recovery  
dv/dt  
4.5 (Note 3)  
4.0  
V/ns  
A
1
1
2
1
2
3
2
3
3
Continuous Source Current  
(Body Diode)  
I
S
3
DPAK  
TO220FP TO220AB  
IPAK  
CASE 369AA  
STYLE 2  
CASE 221D CASE 221A  
STYLE 1  
CASE 369D  
STYLE 5  
STYLE 2  
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for  
10 s Package Body for 10 s  
T
300  
260  
°C  
L
T
PKG  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Operating Junction and  
Storage Temperature Range  
T , T  
55 to 150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1sq. pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
2. Limited by maximum junction temperature  
3. I = 4.0 A, di/dt 100 A/ms, V BV  
, T = +150°C  
J
SD  
DD  
DSS  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 Rev. 1  
NDF04N62Z/D  
 

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