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NDP04N60ZG

更新时间: 2024-11-08 10:27:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
8页 148K
描述
N-Channel Power MOSFET 1.8 , 600 Volts

NDP04N60ZG 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):3 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

NDP04N60ZG 数据手册

 浏览型号NDP04N60ZG的Datasheet PDF文件第2页浏览型号NDP04N60ZG的Datasheet PDF文件第3页浏览型号NDP04N60ZG的Datasheet PDF文件第4页浏览型号NDP04N60ZG的Datasheet PDF文件第5页浏览型号NDP04N60ZG的Datasheet PDF文件第6页浏览型号NDP04N60ZG的Datasheet PDF文件第7页 
NDF04N60Z, NDP04N60Z,  
NDD04N60Z  
N-Channel Power MOSFET  
1.8 W, 600 Volts  
Features  
http://onsemi.com  
Low ON Resistance  
Low Gate Charge  
100% Avalanche Tested  
These Devices are PbFree and are RoHS Compliant  
V
R
(TYP) @ 2 A  
DS(ON)  
DSS  
600 V  
1.8 Ω  
Applications  
Adapter (Notebook, Printer, Gaming)  
LCD Panel Power  
Lighting Ballasts  
4
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
4
Rating  
Symbol  
NDF  
600 (Note 1)  
4.0 (Note 2)  
NDD/NDP Unit  
DraintoSource Voltage  
Continuous Drain Current  
Continuous Drain Current  
V
DSS  
V
A
A
2
1
1
1
1
2
2
3
2
I
I
D
3
3
3
DPAK  
TO220FP TO220AB  
CASE 221D CASE 221A CASE 369D  
STYLE 1 STYLE 5  
STYLE 2  
IPAK  
2.7 (Note 2)  
D
CASE 369AA  
STYLE 2  
T = 100°C  
A
Pulsed Drain Current, V @ 10V  
I
14 (Note 2)  
A
W
V
GS  
DM  
Power Dissipation (Note 1)  
GatetoSource Voltage  
P
28  
95  
D
MARKING DIAGRAMS  
V
30  
51  
GS  
4
Drain  
Single Pulse Avalanche Energy,  
E
mJ  
AS  
L = 6.4 mH, I = 4.0 A  
D
ESD (HBM) (JESD 22114B)  
V
2500  
V
V
esd  
RMS Isolation Voltage (t = 0.3  
V
ISO  
4500  
NDF04N60ZG  
sec., R.H. 30%, T = 25°C)  
or  
A
(Figure 13)  
NDP04N60ZG  
AYWW  
Peak Diode Recovery  
dv/dt  
4.5 (Note 3)  
4.0  
V/ns  
A
Gate  
Source  
1
2
3
Continuous Source Current  
(Body Diode)  
I
S
4
Gate Drain Source  
Drain  
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for 10 s  
Package Body for 10 s  
T
300  
260  
°C  
L
T
PKG  
Drain  
2
Operating Junction and  
Storage Temperature Range  
T , T  
55 to 150  
°C  
J
stg  
Drain  
1
3
Gate Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
Y
WW  
G
= Location Code  
= Year  
= Work Week  
= PbFree Package  
1. Surface mounted on FR4 board using 1sq. pad size, 1 oz cu  
2. Limited by maximum junction temperature  
3. I = 4.0 A, di/dt 100 A/ms, V BV  
, T = +150°C  
J
SD  
DD  
DSS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 Rev. 0  
NDF04N60Z/D  
 

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