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NDH8503N

更新时间： 2024-09-12 22:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 73K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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NDH8503N 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT包装说明：SUPERSOT-8
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.92
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：3.5 A最大漏极电流 (ID)：3.8 A
最大漏源导通电阻：0.033 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.8 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON

NDH8503N 数据手册

 浏览型号NDH8503N的Datasheet PDF文件第2页浏览型号NDH8503N的Datasheet PDF文件第3页浏览型号NDH8503N的Datasheet PDF文件第4页浏览型号NDH8503N的Datasheet PDF文件第5页浏览型号NDH8503N的Datasheet PDF文件第6页 
May 1997  
NDH8503N  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
3.8 A, 30 V. RDS(ON) = 0.033 W @ VGS = 10 V  
RDS(ON) = 0.05 W @ VGS = 4.5 V.  
SuperSOTTM-8 N-Channel enhancement mode power field  
effect transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance.  
These devices are particularly suited for low voltage  
applications such as notebook computer power management,  
and other battery powered circuits where fast switching, and  
low in-line power loss are needed in a very small outline surface  
mount package.  
Proprietary SuperSOTTM-8 package design using copper  
lead frame for superior thermal and electrical capabilities.  
High density cell design for extremely low RDS(ON)  
.
Exceptional on-resistance and maximum DC current  
capability.  
____________________________________________________________________________________________  
4
5
6
3
2
7
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise note  
Symbol Parameter  
NDH8503N  
Units  
Drain-Source Voltage  
30  
V
V
A
VDSS  
VGSS  
ID  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
±20  
3.8  
(Note 1)  
(Note 1 )  
10.5  
0.8  
Maximum Power Dissipation  
W
PD  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1)  
156  
40  
°C/W  
°C/W  
© 1997 Fairchild Semiconductor Corporation  
NDH8503N Rev.C  
123456

中文翻译

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 		TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO

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