Datasheet > NDH8520C

NDH8520C

更新时间： 2024-09-12 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
12页	230K
描述
Dual N & P-Channel Enhancement Mode Field Effect Transistor

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NDH8520C 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOT	包装说明：	SUPERSOT-8
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.84
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	2.2 A	最大漏极电流 (ID)：	2.8 A
最大漏源导通电阻：	0.07 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e0
元件数量：	2	端子数量：	8
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	0.8 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

NDH8520C 数据手册

December 1996

NDH8520C

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

N-Channel 2.8 A, 30 V,R_DS(ON)=0.07W @ V_GS=10 V

These dual N- and P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

R_DS(ON)=0.1W @ V_GS=4.5 V P-Channel -2.2 A,-30 V,

R_DS(ON)=0.11W @ V_GS=-10 V

R_DS(ON)=0.18 W @ V_GS=-4.5 V.

Proprietary SuperSOT^TM-8 package design using copper lead

frame for superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current capability.

___________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

N-Channel

P-Channel

-30

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

±20

2.8

±20

(Note 1)

-2.2

-10

Power Dissipation for Single Operation

(Note 1)

0.8

P_D

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1)

156

°C/W

Thermal Resistance, Junction-to-Case

NDH8520C Rev.B

12 3 4 5 6 7...12

中文翻译

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与NDH8520C相关器件

型号	品牌	获取价格	描述	数据表
NDH8520CD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.8A I(D), 30V, N-Channel and P-Channel, Silicon, Me
NDH8520CL86Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 2-Element, N-Channel and P-Channel,
NDH8520CL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.8A I(D), 30V, N-Channel and P-Channel, Silicon, Me
NDH8520CS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.8A I(D), 30V, N-Channel and P-Channel, Silicon, Me
NDH8520CX	TI	获取价格	2800mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8
NDH8521C	FAIRCHILD	获取价格	Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDH8521CD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 2-Element, N-Channel and P-Channel,
NDH8521CL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 2-Element, N-Channel and P-Channel,
NDH853N	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDH853ND84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 7.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

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