Datasheet > NDH854P

NDH854P

更新时间： 2024-09-14 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	88K
描述
P-Channel Enhancement Mode Field Effect Transistor

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NDH854P 数据手册

May 1997

NDH854P

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

SuperSOT^TM-8 P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

-5.1 A, -30 V. R_DS(ON)= 0.032 W @ V_GS= -10 V

R_DS(ON)= 0.052 W @ V_GS= -4.5V.

Proprietary SuperSOT^TM-8 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

____________________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

NDH854P

-30

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

V_DSS

V_GSS

I_D

±20

(Note 1a)

-5.1

-15

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.8

(Note 1c)

0.9

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_q_JA

R_qJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

NDH854P Rev.D

12 3 4 5 6 7 8

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