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NDH8521C

更新时间： 2024-09-12 22:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 104K
描述
Dual N & P-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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NDH8521C 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT包装说明：SUPERSOT-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.35
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：3.8 A最大漏极电流 (ID)：3.8 A
最大漏源导通电阻：0.033 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL AND P-CHANNEL认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn85Pb15)端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NDH8521C 数据手册

 浏览型号NDH8521C的Datasheet PDF文件第2页浏览型号NDH8521C的Datasheet PDF文件第3页浏览型号NDH8521C的Datasheet PDF文件第4页浏览型号NDH8521C的Datasheet PDF文件第5页浏览型号NDH8521C的Datasheet PDF文件第6页浏览型号NDH8521C的Datasheet PDF文件第7页 
May 1997  
NDH8521C  
Dual N & P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
These dual N- and P-Channel enhancement mode power field  
effect transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance  
and provide superior switching performance. These devices  
are particularly suited for low voltage applications such as  
notebook computer power management and other battery  
powered circuits where fast switching, low in-line power loss,  
and resistance to transients are needed.  
N-Ch 3.8 A, 30 V, RDS(ON)=0.033W @ VGS=10 V  
RDS(ON)=0.05 W @ VGS=4.5 V  
P-Ch -2.7 A, -30 V,RDS(ON)=0.07 W @ VGS=-10 V  
RDS(ON)=0.115 W @ VGS=-4.5 V.  
Proprietary SuperSOTTM-8 package design using copper lead  
frame for superior thermal and electrical capabilities.  
High density cell design for extremely low RDS(ON)  
.
Exceptional on-resistance and maximum DC current  
capability.  
________________________________________________________________________________  
4
5
6
3
2
7
8
1
Absolute Maximum Ratings  
TA= 25°C unless otherwise noted  
Symbol Parameter  
N-Channel  
30  
P-Channel  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
-30  
±20  
-2.7  
-8  
V
V
A
±20  
(Note 1)  
3.8  
10.5  
Power Dissipation for Single Operation  
(Note 1)  
0.8  
W
PD  
TJ,TSTG  
Operating and Storage Temperature Range  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient (Note 1)  
Thermal Resistance, Junction-to-Case  
156  
40  
°C/W  
°C/W  
(Note 1)  
© 1997 Fairchild Semiconductor Corporation  
NDH8521C Rev.C  
12345678

中文翻译

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