Datasheet > NDH8504P

NDH8504P

更新时间： 2024-09-12 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管开关光电二极管
页数	文件大小	规格书
10页	212K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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NDH8504P 数据手册

February 1997

NDH8504P

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

-2.7 A, -30 V. R_DS(ON)= 0.07W @ V_GS= -10 V

_DS(ON)= 0.115 W @ V_GS= -4.5 V.

SuperSOT^TM-8 P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications such as notebook computer power management

and other battery powered circuits where fast high-side

switching, and low in-line power loss are needed in a very small

outline surface mount package.

Proprietary SuperSOT^TM-8 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

___________________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Units

NDH8504P

V_DSS

Drain-Source Voltage

-30

V_GSS

I_D

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

±20

-2.7

-8

(Note 1)

Maximum Power Dissipation

0.8

P_D

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1)

156

°C/W

Thermal Resistance, Junction-to-Case

NDH8504P Rev.C

12 3 4 5 6 7...10

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