生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 0.08 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDH8320CS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3A I(D), 20V, N-Channel and P-Channel, Silicon, Meta | |
NDH8321C | FAIRCHILD |
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Dual N & P-Channel Enhancement Mode Field Effect Transistor | |
NDH8321C | ROCHESTER |
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3800mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 | |
NDH8321CD84Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.8A I(D), 20V, N-Channel and P-Channel, Silicon, Me | |
NDH8321CL86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, | |
NDH8321CS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.8A I(D), 20V, N-Channel and P-Channel, Silicon, Me | |
NDH832P | FAIRCHILD |
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P-Channel Enhancement Mode Field Effect Transistor | |
NDH832P/D84Z | TI |
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4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH832P/L86Z | TI |
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4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH832P/L99Z | TI |
获取价格 |
4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |