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NDH834P PDF预览

NDH834P

更新时间: 2024-01-28 20:48:20
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 85K
描述
P-Channel Enhancement Mode Field Effect Transistor

NDH834P 数据手册

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May 1997  
NDH834P  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
-5.6 A, -20 V. RDS(ON) = 0.035 W @ VGS = -4.5 V  
SuperSOTTM-8 P-Channel enhancement mode power field  
effect transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance  
and provide superior switching performance. These devices  
are particularly suited for low voltage applications such as  
battery powered circuits or portable electronics where fast  
switching, low in-line power loss, and resistance to transients  
are needed.  
RDS(ON) = 0.045 W @ VGS = -2.7V.  
Proprietary SuperSOTTM-8 package design using copper  
lead frame for superior thermal and electrical capabilities.  
High density cell design for extremely low RDS(ON)  
.
Exceptional on-resistance and maximum DC current  
capability.  
____________________________________________________________________________________________  
5
4
3
2
1
6
7
8
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol Parameter  
NDH834P  
-20  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
V
V
A
±8  
(Note 1a)  
-5.6  
-15  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.8  
W
PD  
1
(Note 1c)  
0.9  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
70  
20  
°C/W  
°C/W  
© 1997 Fairchild Semiconductor Corporation  
NDH834P Rev.C  

NDH834P 替代型号

型号 品牌 替代类型 描述 数据表
NDS9430A FAIRCHILD

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