生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.37 | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 3.8 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDH832P | FAIRCHILD |
获取价格 |
P-Channel Enhancement Mode Field Effect Transistor | |
NDH832P/D84Z | TI |
获取价格 |
4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH832P/L86Z | TI |
获取价格 |
4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH832P/L99Z | TI |
获取价格 |
4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH832P/S62Z | TI |
获取价格 |
4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH832PD84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
NDH832PL86Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
NDH832PL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
NDH833N | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDH833ND84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal |