NDH833N

更新时间： 2024-02-21 13:40:12

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
10页	222K
描述
N-Channel Enhancement Mode Field Effect Transistor

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NDH833N 数据手册

February 1997

NDH833N

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

7.1 A, 20 V. R_DS(ON)= 0.020 W @ V_GS= 4.5 V

SuperSOT^TM-8 N-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

battery powered circuits or portable electronics where fast

switching, low in-line power loss, and resistance to transients

are needed.

R_DS(ON)= 0.025 W @ V_GS= 2.7 V.

Proprietary SuperSOT^TM-8 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

___________________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise note

Symbol

Parameter

NDH833N

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

±8

7.1

(Note 1a)

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.8

P_D

(Note 1c)

0.9

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

NDH833N Rev. C

12 3 4 5 6 7...10

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与NDH833N相关器件

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