Datasheet > NCE72R60D *

NCE72R60D *

更新时间： 2024-11-22 15:18:39

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	224K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE72R60D * 数据手册

http://www.ncepower.com

NCE72R60D

NCE N-Channel Enhancement Mode Power MOSFET

General Features

● V_DS= 60V,I_D= 0.41A

R_DS(ON)< 5.0Ω @ V_GS=4.5V

R_DS(ON)< 4.7Ω @ V_GS=10V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Application

Schematic diagram

●Direct logic-level interface: TTL/CMOS

●Drivers: relays, solenoids, lamps, hammers,display,

memories, transistors, etc.

●Battery operated systems

●Solid-state relays

Pin assignment

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

72R

NCE72R60D

DFN1X1-4L

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

T_A=25℃

0.41

Continuous Drain Current (T_J=150℃)

I_D

T_A=100℃

0.29

Drain Current-Pulsed ^{(Note 1)}

Maximum Power Dissipation

0.8

I_DM

P_D

0.35

℃

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

350

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=60V,V_GS=0V

μA

Wuxi NCE Power Co., Ltd

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