Datasheet > NCE7580D

NCE7580D

更新时间： 2024-11-18 05:51:59

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	406K
描述
NCE N-Channel Enhancement Mode Power MOSFET

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NCE7580D 数据手册

Pb Free Product

http://www.ncepower.com

NCE7580D

NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The NCE7580D uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge.

This device is suitable for use in PWM, load switching and

general purpose applications.

GENERAL FEATURES

● V_DS= 75V,I_D=80A

Schematic diagram

R_DS(ON)<8mΩ @ V_GS=10V（Typ：6.5mΩ）

● Special process technology for high ESD capability

● Special designed for Convertors and power controls

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Marking and pin Assignment

Application

●

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

TO-263-2L top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE7580D

TO-263-2L

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

±25

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

320

Maximum Power Dissipation

P_D

Peak diode recovery voltage

dv/dt

170

1.13

580

V/ns

W/℃

℃

Derating factor

Single pulse avalanche energy (Note 5)

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

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