Datasheet > NCE80TD65BT

NCE80TD65BT

更新时间： 2024-04-09 19:00:43

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
12页	1655K
描述
新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（InjectionEnhance,IE）与场截止（FieldStop，FS）技术，新洁能IGBT系列产品在提供行业

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NCE80TD65BT 数据手册

Pb Free Product

NCE80TD65BT

650V, 80A, Trench FS II Fast IGBT

General Description

Using NCE's proprietary trench design and advanced FS (Field Stop) second

generation technology, the 650V Trench FSII IGBT offers superior conduction and

switching performances, and easy parallel operation;

Features

 Trench FSII Technology offering

 Very low V_CE(sat)

 High speed switching

 Positive temperature coefficient in V_CE(sat)

 Very tight parameter distribution

 High ruggedness, temperature stable behavior

Schematic diagram

Application

 Air Condition

 Inverters

 Motor drives

Package Marking and Ordering Information

Device

Device Package

Device Marking

NCE80TD65BT

TO-247

NCE80TD65BT

TO-247

Absolute Maximum Ratings (T_C=25°C unless otherwise noted)

Symbol

Parameter

Value

Units

V_CES

Collector-Emitter Voltage

650

±30

Gate- Emitter Voltage

V_GES

Gate- Emitter Voltage (AC)

±40

Collector Current

160

I_C

Collector Current @T_C= 100 °C

I_Cpuls

Pulsed Collector Current，t_plimited by T_jmax

Turn off safe operating area，V_CE=650V，T_j=175°C

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current

Power Dissipation @ T_C= 25°C

320

I_F

I_FM

320

416

°C

P_D

Power Dissipation @T_C= 100 °C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

208

T_J,T_stg

T_L

-55 to +175

260

Short circuit withstand time V_GE=15V, V_CC≤400V,

Allowed number of short circuits<1000Time between

short circuits:≥1.0s,T_j≤150°C

t_sc

Wuxi NCE Power Co., Ltd

Page

V4.2

http://www.ncepower.com

12 3 4 5 6 7...12

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