Datasheet > NCE80H12

NCE80H12

更新时间： 2024-03-03 10:10:00

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	337K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCE80H12 数据手册

Pb Free Product

http://www.ncepower.com

NCE80H12

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE80H12 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=80V,I_D=120A

R_DS(ON)<6mΩ @ V_GS=10V

Schematic diagram

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Marking and pin assignment

Application

● Automotive applications

● Hard switched and high frequency circuits

● Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE80H12

TO-220-3L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

120

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

450

Maximum Power Dissipation

220

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

1.47

W/℃

℃

E_AS

1400

-55 To 175

Operating Junction and Storage Temperature Range

T_J,T_STG

Wuxi NCE Power Semiconductor Co., Ltd

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