Datasheet > NCE75H21

NCE75H21

更新时间： 2024-11-18 05:51:59

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	348K
描述
NCE N-Channel Enhancement Mode Power MOSFET

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中文翻译

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NCE75H21 数据手册

Pb Free Product

http://www.ncepower.com

NCE75H21

NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The NCE75H21 uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge. It can be

used in Automotive applications and a wide variety of other

applications.

GENERAL FEATURES

● V_DSS=75V,I_D=210A

Schematic diagram

R_DS(ON)< 4mΩ @ V_GS=10V

● Good stability and uniformity with high E_AS

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Excellent package for good heat dissipation

Marking and pin Assignment

Application

●

Automotive applications

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

100% UIS TESTED!

TO-220 top view

100% ΔVds TESTED!

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE75H21

TO-220

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DSS

V^GS

±20

210

150

850

480

3.2

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/℃

V/ns

℃

Single pulse avalanche energy (Note 3)

Peak Diode Recovery dv/dt (Note 4)

Operating Junction and Storage Temperature Range

E_AS

dv/dt

2200

-55 To 175

T_J,T_STG

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

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