Datasheet > NCE7560K

NCE7560K

更新时间： 2024-11-18 05:51:59

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	421K
描述
NCE N-Channel Enhancement Mode Power MOSFET

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NCE7560K 数据手册

NCE7560K

http://www.ncepower.com

Pb-Free Product

NCE N-Channel Enhancement Mode Power MOSFET

Product Summary

General Description

The NCE7560K uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. It can be used in a wide variety of applications.

BV_DSS

typ.

6.8

8.0

R_DS(ON)typ.

max.

mΩ

I_D

Features

● V_DS=75V；I_D=60A@ V_GS=10V；

R_DS(ON)<8mΩ @ V_GS=10V

100% UIS TESTED!

● Special process technology for high ESD capability

● Special designed for Convertors and power controls

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Application

●

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

TO-252-2L top view

Schematic diagram

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE7560K

TO-252-2L

Table 1. Absolute Maximum Ratings (TA=25℃)

Parameter

Symbol

Value

Unit

Drain-Source Voltage (V_GS=0V）

Gate-Source Voltage (V_DS=0V)

V_DS

V_GS

±25

Drain Current (DC) at Tc=25℃

I_{D (DC)}

I_{DM (pluse)}

dv/dt

P_D

Drain Current (DC) at Tc=100℃

Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}

310

Peak diode recovery voltage

V/ns

Maximum Power Dissipation(Tc=25℃)

Derating factor

Single pulse avalanche energy ^{(Note 2)}

140

0.95

300

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 175

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2.EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH

Wuxi NCE Power Semiconductor Co., Ltd

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