Datasheet > NCE70R540I

NCE70R540I

更新时间： 2024-11-19 01:21:51

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
8页	801K
描述
N-Channel Super Junction Power MOSFET ll

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NCE70R540I 数据手册

NCE70R540I,NCE70R540K

N-Channel Super Junction Power MOSFET Ⅱ

General Description

The series of devices use advanced super junction

technology and design to provide excellent RDS(ON) with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

700

540

mΩ

R_{DS(ON) TYP.}

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE70R540I

NCE70R540K

TO-251

NCE70R540I

NCE70R540K

TO-252

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

Unit

700

±30

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

5.2

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

0.64

185

W/°C

Single pulse avalanche energy ^{(Note 2)}

Avalanche current^{(Note 1)}

EAS

I_AR

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

0.4

E_AR

Wuxi NCE Power Semiconductor Co., Ltd

Page

http://www.ncepower.com

V1.0

12 3 4 5 6 7 8

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