NCE70T900D,NCE70T900, NCE70T900F
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS
700
820
V
RDS(ON)TYP
mΩ
ID
5
A
Features
● New technology for high voltage device
● Low on-resistance and low conduction losses
● Small package
● Ultra Low Gate Charge cause lower driving requirements
● 100% Avalanche Tested
● ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE70T900D
NCE70T900
NCE70T900F
TO-263
NCE70T900D
NCE70T900
NCE70T900F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
NCE70T900
NCE70T900D
Parameter
Symbol
NCE70T900F
Unit
700
V
V
Drain-Source Voltage (VGS=0V)
VDS
VGS
±30
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
5
3
5*
3*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
A
(Note 1)
20
46
0.37
20*
29
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
W
W/°C
mJ
A
Derate above 25°C
0.23
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
52
EAS
0.9
IAR
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
0.14
EAR
mJ
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
v1.0