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NCE70T900F PDF预览

NCE70T900F

更新时间: 2024-03-03 10:10:24
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关栅极
页数 文件大小 规格书
10页 707K
描述
新洁能提供击穿电压等级范围为500V至800V的N沟道SJ-III系列功率MOSFET产品,以良好的导通电阻,极低的栅极电荷,出色的开关速度,以及极具竞争力的性价比,成为开关电源应用中的理想选择。

NCE70T900F 数据手册

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NCE70T900DNCE70T900, NCE70T900F  
N-Channel Super Junction Power MOSFET Ⅲ  
General Description  
The series of devices use advanced trench gate super  
junction technology and design to provide excellent RDS(ON)  
with low gate charge. This super junction MOSFET fits the  
industry’s AC-DC SMPS requirements for PFC, AC/DC  
power conversion, and industrial power applications.  
VDS  
700  
820  
V
RDS(ON)TYP  
mΩ  
ID  
5
A
Features  
New technology for high voltage device  
Low on-resistance and low conduction losses  
Small package  
Ultra Low Gate Charge cause lower driving requirements  
100% Avalanche Tested  
ROHS compliant  
Application  
Power factor correctionPFC)  
Switched mode power supplies(SMPS)  
Uninterruptible Power SupplyUPS)  
Schematic diagram  
Package Marking And Ordering Information  
Device  
Device Package  
Marking  
NCE70T900D  
NCE70T900  
NCE70T900F  
TO-263  
NCE70T900D  
NCE70T900  
NCE70T900F  
TO-220  
TO-220F  
TO-263  
TO-220  
TO-220F  
Table 1. Absolute Maximum Ratings (TC=25)  
NCE70T900  
NCE70T900D  
Parameter  
Symbol  
NCE70T900F  
Unit  
700  
V
V
Drain-Source Voltage (VGS=0V)  
VDS  
VGS  
±30  
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)  
Continuous Drain Current at Tc=25°C  
Continuous Drain Current at Tc=100°C  
5
3
5*  
3*  
A
ID (DC)  
ID (DC)  
IDM (pluse)  
PD  
A
(Note 1)  
20  
46  
0.37  
20*  
29  
A
Pulsed drain current  
Maximum Power Dissipation(Tc=25)  
W
W/°C  
mJ  
A
Derate above 25°C  
0.23  
Single pulse avalanche energy (Note2)  
Avalanche current(Note 1)  
52  
EAS  
0.9  
IAR  
Repetitive Avalanche energy tAR limited by Tjmax  
(Note 1)  
0.14  
EAR  
mJ  
Wuxi NCE Power Co., Ltd  
Page 1  
http://www.ncepower.com  
v1.0  

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