Datasheet > NCE70R1K2I

NCE70R1K2I

更新时间： 2024-11-19 01:21:51

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
8页	765K
描述
N-Channel Super Junction Power MOSFET

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NCE70R1K2I 数据手册

NCE70R1K2K,NCE70R1K2I

N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced super junction

technology and design to provide excellent RDS(ON) with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

700

1200

mΩ

R_DS(ON)TYP.

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE70R1K2I

NCE70R1K2K

TO-251

NCE70R1K2I

NCE70R1K2K

TO-252

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

Unit

700

±30

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

2.5

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

0.37

130

W/°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

EAS

I_AR

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

0.2

E_AR

Wuxi NCE Power Semiconductor Co., Ltd

Page

http://www.ncepower.com

V1.0

12 3 4 5 6 7 8

中文翻译

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