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NCE70R1K2I PDF预览

NCE70R1K2I

更新时间: 2024-09-20 01:21:51
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
8页 765K
描述
N-Channel Super Junction Power MOSFET

NCE70R1K2I 数据手册

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NCE70R1K2K,NCE70R1K2I  
N-Channel Super Junction Power MOSFET  
General Description  
The series of devices use advanced super junction  
technology and design to provide excellent RDS(ON) with low  
gate charge. This super junction MOSFET fits the industry’s  
AC-DC SMPS requirements for PFC, AC/DC power  
conversion, and industrial power applications.  
VDS  
700  
1200  
4
V
mΩ  
A
RDS(ON)TYP.  
ID  
Features  
New technology for high voltage device  
Low on-resistance and low conduction losses  
Small package  
Ultra Low Gate Charge cause lower driving requirements  
100% Avalanche Tested  
ROHS compliant  
Application  
Power factor correctionPFC)  
Switched mode power supplies(SMPS)  
Uninterruptible Power SupplyUPS)  
Schematic diagram  
Package Marking And Ordering Information  
Device  
Device Package  
Marking  
NCE70R1K2I  
NCE70R1K2K  
TO-251  
NCE70R1K2I  
NCE70R1K2K  
TO-252  
TO-251  
TO-252  
Table 1. Absolute Maximum Ratings (TC=25)  
Parameter  
Symbol  
VDS  
Value  
Unit  
V
700  
±30  
4
Drain-Source Voltage (VGS=0V)  
V
Gate-Source Voltage (VDS=0V)  
VGS  
Continuous Drain Current at Tc=25°C  
A
ID (DC)  
ID (DC)  
IDM (pluse)  
PD  
Continuous Drain Current at Tc=100°C  
2.5  
12  
A
(Note 1)  
A
Pulsed drain current  
Maximum Power Dissipation(Tc=25)  
46  
W
Derate above 25°C  
0.37  
130  
2
W/°C  
mJ  
A
Single pulse avalanche energy (Note2)  
Avalanche current(Note 1)  
EAS  
IAR  
Repetitive Avalanche energy tAR limited by Tjmax  
(Note 1)  
0.2  
EAR  
mJ  
Wuxi NCE Power Semiconductor Co., Ltd  
Page  
http://www.ncepower.com  
V1.0  
1

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