Datasheet > NCE60P70G

NCE60P70G

更新时间： 2024-05-14 22:08:25

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	675K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE60P70G 数据手册

http://www.ncepower.com

NCE60P70G

Electrical Characteristics (T_C=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics ^{(Note 3)}

BV_DSS

I_DSS

V_GS=0V I_D=-250μA

V_DS=-60V,V_GS=0V

V_GS=±20V,V_DS=0V

-60

-1

μA

I_GSS

±100

Gate Threshold Voltage

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=-250μA

V_GS=-10V, I_D=-20A

V_GS=-4.5V, I_D=-20A

V_DS=-5V,I_D=-20A

-1.2

-1.8

-2.4

mΩ

Drain-Source On-State Resistance

Forward Transconductance

Dynamic Characteristics ^(Note4)

Input Capacitance

C_lss

C_oss

C_rss

5604

356

V_DS=-30V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 4)}

Turn-on Delay Time

265

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=-30V, R_L=1.5Ω，

V_GS=-10V,R_G=3Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

62.1

9.3

16.8

V_DS=-30,I_D=-20A,

V_GS=-10V

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage ^{(Note 3)}

Diode Forward Current ^{(Note 2)}

Reverse Recovery Time

V_SD

I_S

V_GS=0V,I_S=-20A

-1.2

-70

t_rr

TJ = 25°C, IF =- 20A

di/dt = -100A/μs^(Note3)

Reverse Recovery Charge

Qrr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. The value of R_θJAis measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T_A=25° C. The value in any

given application depends on the user's specific board design, and the maximum temperature of150° C may be used if the PCB allows it.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. E_AScondition: Tj=25℃,V_DD=-30V,V_G=-10V,L=0.5mH,Rg=25Ω

Wuxi NCE Power Co., Ltd

Page2

V2.0

123 4 5 6 7

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