Datasheet > NCE65N180

NCE65N180

更新时间： 2024-04-09 18:59:21

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	670K
描述
新洁能提供击穿电压等级范围为500V至1050V的N沟道SJ-IV系列功率MOSFET产品。采用第四代技术超结技术的产品，具有优异的性能，实现了业界先进的超低特征导通电阻（Ron,sp），在相同体

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NCE65N180 数据手册

NCE65N180

N-Channel Super Junction Power MOSFET Ⅳ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_{DS min@Tjmax}

R_DS(ON)TYP

710

160

mΩ

Features

●Optimized body diode reverse recovery performance

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

●

Power factor correction（PFC）

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

LLC Half-bridge

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE65N180

TO-220-3L

NCE65N180

G D S

TO-220

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

650

±30

±20

Unit

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V) AC (f>1 Hz)

Gate-Source Voltage (VDS=0V) DC

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

Pulsed drain current ^{(Note 1)}

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

Maximum Power Dissipation(Tc=25°C)

Derate above 25°C

194

1.29

144

W/°C

Single pulse avalanche energy ^{(Note 2)}

Avalanche current^{(Note 1)}

EAS

I_AS

(Note 1)

Repetitive Avalanche energy ，t_ARlimited by T_jmax

0.73

E_AR

V/ns

°C

Drain Source voltage slope, V_DS≤480 V,

Reverse diode dv/dt，V_DS≤480 V,I_SD<I_D

dv/dt

T_J,T_STG

Operating Junction and Storage Temperature Range

-55...+175

Wuxi NCE Power Co., Ltd

Page 1

http://www.ncepower.com

V1.0

12 3 4 5 6 7

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