NCE60R540D,NCE60R540,NCE60R540F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
VDS@Tjmax
RDS(ON) MAX
ID
650
540
8
V
mΩ
A
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R540D
NCE60R540
NCE60R540F
TO-263
NCE60R540D
NCE60R540
NCE60R540F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
NCE60R540D
NCE60R540
Parameter
Symbol
NCE60R540F
Unit
600
V
V
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
VDS
VGS
±30
Continuous Drain Current at Tc=25°C
8
5.2
24
8*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
Continuous Drain Current at Tc=100°C
5.2*
24*
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
80
31.7
0.25
W
Derate above 25°C
0.64
W/°C
mJ
A
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
185
4
EAS
IAR
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
0.4
EAR
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
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