NCE60R540D,NCE60R540,NCE60R540F
NCE60R540D
Parameter
Symbol
NCE60R540F
Unit
NCE60R540
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt,VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
50
15
dv/dt
dv/dt
V/ns
V/ns
°C
-55...+150
TJ,TSTG
Table 2. Thermal Characteristic
Parameter
NCE60R540D
Symbol
NCE60R540F
Unit
NCE60R540
Thermal Resistance,Junction-to-Case(Maximum)
Thermal Resistance,Junction-to-Ambient (Maximum)
RthJC
RthJA
1.56
62
3.94
80
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=4A
600
V
μA
μA
nA
V
1
IDSS
100
±100
IGSS
VGS(th)
RDS(ON)
2.5
3
3.5
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
480
540
mΩ
gFS
Clss
Coss
Crss
Qg
VDS = 20V, ID = 4A
5.5
680
58
S
pF
pF
pF
nC
nC
nC
Ω
VDS=50V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Total Gate Charge
4
14.5
2.8
5.5
2
22
VDS=480V,ID=8A,
Gate-Source Charge
Qgs
Qgd
RG
VGS=10V
Gate-Drain Charge
Intrinsic gate resistance
f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
5.5
3.5
55
nS
nS
nS
nS
Turn-on Rise Time
VDD=380V,ID=4A,
RG=12Ω,VGS=10V
Turn-Off Delay Time
75
10
Turn-Off Fall Time
6.5
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISD
ISDM
VSD
trr
8
A
A
TC=25°C
23.4
1.2
Tj=25°C,ISD=8A,VGS=0V
0.9
220
2.2
20
V
Reverse Recovery Time
nS
uC
A
Tj=25°C,IF=8A,di/dt=100A/μs
Reverse Recovery Charge
Peak Reverse Recovery Current
Qrr
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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