NCE60PD05S
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Description
D1
D2
The NCE60PD05S uses advanced trench technology and
G1
G2
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
S1
S2
Schematic diagram
General Features
● VDS =-60V,ID =-5A
RDS(ON) <50mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
Marking and pin assignment
●
●
●
Power switching application
Hard switched and high frequency circuits
DC-DC Converter
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
12mm
Quantity
4000 units
NCE60PD05S
NCE60PD05S
SOP-8
Ø330mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol
Limit
-60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
VGS
±20
-5
-3.5
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
-30
A
Maximum Power Dissipation
3
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
42
℃/W
Wuxi NCE Power Co., Ltd
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