Datasheet > NCE20TH60BF

NCE20TH60BF

更新时间： 2024-03-03 10:11:11

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
8页	582K
描述
新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（InjectionEnhance,IE）与场截止（FieldStop，FS）技术，新洁能IGBT系列产品在提供行业

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NCE20TH60BF 数据手册

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NCE20TH60BF

Thermal Characteristic

Symbol

Parameter

Value

3.62

3.9

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to case for IGBT

Thermal Resistance, Junction to case for Diode

Thermal Resistance, Junction to Ambient

Electrical Characteristics (T_C=25°C unless otherwise noted)

Rating

Symbol

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Static Characteristics

V_(BR)CES

I_CES

I_GES(F)

I_GES(R)

Collector-Emitter Breakdown Voltage

Collector-Emitter Leakage Current

Gate to Emitter Forward Leakage

Gate to Source Reverse Leakage

V_GE=0V,I_CE=1mA

V_GE=0V,V_CE=600V

V_GE=+30V,V_CE=0V

V_GE=-30V,V_CE=0V

600

100

1.9

Tj=25°C

1.7

1.9

I_C=20A

V_CE(sat)

V_GE(th)

Collector-Emitter Saturation Voltage

Gate Threshold Voltage

V_GE=15V

Tj=100°C

I_C=1mA,V_CE=V_GE

4.0

6.0

Dynamic Characteristics

C_ies

C_oes

C_res

Q_g

Input Capacitance

2580

V_CE=25V,V_GE=0V,

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_CC=480V, I_C=20A

V_GE=15V

Q_ge

Q_gc

Gate to Emitter Charge

Gate to Collector Charge

Short circuit collector current Max.1000

short circuits Time between short circuits:

≥1.0s

V_GE=15V,V_CC≤400V,

_SC≤3us,Tj≤150°C

I_C(SC)

130

Switching Characteristics

t_d(ON)Turn-on Delay Time

t_r

t_d(OFF)

t_f

Rise Time

Turn-Off Delay Time

Fall Time

164

V_CC=400V,I_C=10A

V_GE=0/15V, R_g=25Ω

Inductive Load

E_on

E_off

E_ts

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

0.43

0.17

0.60

Electrical Characteristics of the Diode(T_C= 25°C unless otherwise specified)：

Rating

Symbol

Parameter

Test Conditions

Units

Min.

Typ.

1.45

182

5.3

Max.

1.7

V_FM

T_rr

Diode Forward Voltage

I_F=10A

Reverse Recovery Time

I_RRM

Q_rr

Diode Peak Reverse Recovery Current

Reverse Recovery Charge

I_F=10A, di/dt=200A/us

0.5

Pulse width t_tp≤380µs,δ≤2%

Wuxi NCE Power Co., Ltd

Page

V1.1

http://www.ncepower.com

123 4 5 6 7 8

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