Pb Free Product
http://www.ncepower.com
NCE2312A
NCE N-Channel Enhancement Mode Power MOSFET
Description
D
The NCE2312A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
G
S
Schematic diagram
General Features
● VDS = 20V,ID = 5A
RDS(ON) < 35mΩ @ VGS=2.5V
RDS(ON) < 28mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● Battery protection
● Load switch
● Power management
SOT-23 top view
Tape width
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Quantity
3000 units
2312A Ẋ
NCE2312A
SOT-23
Ø180mm
8 mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
20
±10
V
V
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
5
A
ID
15
A
IDM
Maximum Power Dissipation
1.25
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
20
-
22
-
-
V
VDS=20V,VGS=0V
1
μA
Wuxi NCE Power Co., Ltd
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