Datasheet > NCE2308X

NCE2308X

更新时间： 2024-03-03 10:09:14

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	637K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE2308X 数据手册

http://www.ncepower.com

NCE2308X

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE2308X uses advanced trench technology to provide

excellent R_DS(ON), low gate charge. This device is suitable for

use as a Battery protection or in other switching application.

Schematic Diagram

General Features

● V_DS=60V,I_D=3A

R_DS(ON)<78mΩ @ V_GS=10V

R_DS(ON)< 96mΩ @ V_GS=4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and Pin Assignment

Application

●Battery switch

●DC/DC converter

SOT-23 Top View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

2308X

NCE2308X

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

VDS

VGS

I_D

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_DM

Maximum Power Dissipation

1.7

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

73.5

℃/W

R_θJA

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=60V,V_GS=0V

μA

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6 7

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