Pb Free Product
http://www.ncepower.com
NCE2302C
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2302C uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 20V,ID = 3 A
Schematic diagram
RDS(ON) < 80mΩ @ VGS=2.5V
RDS(ON) < 50mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● Battery protection
● Load switch
● Power management
SOT-23 top view
Tape width
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Quantity
3000 units
2302C Ẋ
NCE2302C
SOT-23
Ø180mm
8 mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
V
V
VDS
Gate-Source Voltage
±12
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
3.0
A
ID
12
A
IDM
Maximum Power Dissipation
0.8
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
156
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
20
-
22
-
-
V
VDS=20V,VGS=0V
1
μA
Wuxi NCE Power Co., Ltd
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