Datasheet > NCE2301C

NCE2301C

更新时间： 2024-04-09 19:01:20

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	257K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE2301C 数据手册

Pb Free Product

http://www.ncepower.com

NCE2301C

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE2301C uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications.

General Features

● V_DS= -15V,I_D= -2.6A

R_DS(ON)< 120mΩ @ V_GS=-2.5V

Schematic diagram

R_DS(ON)< 80mΩ @ V_GS=-4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

Application

● PWM applications

● Load switch

SOT-23 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

2301C Ẋ

NCE2301C

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

-15

Unit

Drain-Source Voltage

V^DS

Gate-Source Voltage

±12

V^GS

Drain Current-Continuous

Drain Current -Pulsed ^{(Note 1)}

-2.6

I_D

-13

I_DM

Maximum Power Dissipation

0.9

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

138

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=-250μA

-15

V_DS=-15V,V_GS=0V

-1

μA

Wuxi NCE Power Co., Ltd

Page1

v1.1

12 3 4 5 6 7

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NCE2302C	NCEPOWER	新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFE	获取价格