Datasheet > NCE04N65

NCE04N65

更新时间： 2024-11-26 05:51:59

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	501K
描述
Super Junction MOSFET

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中文翻译

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NCE04N65 数据手册

NCE04N65

Pb-Free Product

NCE N-Channel Enhancement Mode Power MOSFET

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

650

950

4.5

R_DS(ON)

I_D

mΩ

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE04N65

TO-251S

NCE04N65

TO-251S

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

V^DS

NCE04N65

Unit

650

±30

4.5

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

Continuous Drain Current at Tc=100°C

2.8

I_{D (DC)}

(Note 1)

13.5

I_{DM (pluse)}

Pulsed drain current

Drain Source voltage slope, VDS = 480 V, ID = 4.5 A, Tj =

dv/dt

P_D

V/ns

125 °C

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

0.4

130

4.5

W/°C

EAS

I_AR

Wuxi NCE Power Semiconductor Co., Ltd

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