Datasheet > NCE04N65

NCE04N65

更新时间： 2024-02-23 17:26:17

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	501K
描述
Super Junction MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCE04N65 数据手册

NCE04N65

Pb-Free Product

NCE N-Channel Enhancement Mode Power MOSFET

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

650

950

4.5

R_DS(ON)

I_D

mΩ

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE04N65

TO-251S

NCE04N65

TO-251S

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

V^DS

NCE04N65

Unit

650

±30

4.5

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

Continuous Drain Current at Tc=100°C

2.8

I_{D (DC)}

(Note 1)

13.5

I_{DM (pluse)}

Pulsed drain current

Drain Source voltage slope, VDS = 480 V, ID = 4.5 A, Tj =

dv/dt

P_D

V/ns

125 °C

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

0.4

130

4.5

W/°C

EAS

I_AR

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

中文翻译

下载PDF

与NCE04N65相关器件

型号	品牌	获取价格	描述	数据表
NCE07N65	NCEPOWER	获取价格	Super Junction MOSFET
NCE07N65F	NCEPOWER	获取价格	Super Junction MOSFET
NCE07T60BI	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE07TD60B	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE07TD60BD	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE07TD60BF	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE07TD60BI	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE07TD60BK	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（Inje
NCE1	CIT	获取价格	CIT SWITCH
NCE100A10K	ETC	获取价格	Crystal Clock Oscillator