Datasheet > NCE1102N

NCE1102N

更新时间： 2024-04-09 19:03:19

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	301K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE1102N 数据手册

http://www.ncepower.com

NCE1102N

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE1102N uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS= 110V,I_D= 2A

Schematic diagram

R_DS(ON)<250mΩ @ V_GS=10V (Typ:218mΩ)

R_DS(ON)<310mΩ @ V_GS=10V (Typ:260mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Marking and pin assignment

SOT23-6L top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

1102N

NCE1102N

SOT23-6L

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

110

V^DS

Gate-Source Voltage

±20

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_D

I_DM

Maximum Power Dissipation

1.25

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

100

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

110

V_DS=110V,V_GS=0V

μA

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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