Datasheet > NCE10TD60BF

NCE10TD60BF

更新时间： 2024-03-03 10:09:09

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
10页	677K
描述
新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（InjectionEnhance,IE）与场截止（FieldStop，FS）技术，新洁能IGBT系列产品在提供行业

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NCE10TD60BF 数据手册

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NCE10TD60BF,NCE10TD60BD,NCE10TD60B

600V, 10A, Trench FS II Fast IGBT

General Description:

Using NCE's proprietary trench design and advanced FS (Field Stop) second

generation technology, the 600V Trench FSII IGBT offers superior conduction and

switching performances, and easy parallel operation;

Features

Trench FSII Technology offering

⚫ Very low V_CE

sat

（

）

⚫ High speed switching

⚫ Positive temperature coefficient in V_CE

sat

（

）

⚫ Very tight parameter distribution

⚫ High ruggedness, temperature stable behavior

Schematic diagram

Application

⚫ Air Condition

⚫ Inverters

⚫ Motor drives

Package Marking and Ordering Information

Device

Device Package

Device Marking

NCE10TD60BF

NCE10TD60B

NCE10TD60BD

NCE10TD60BF

NCE10TD60B

NCE10TD60BD

TO-220F

TO-220

TO-263

TO-220F

TO-220

TO-263

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Symbol

Parameter

TO-220/TO-263

TO-220F

Units

V_CES

Collector-Emitter Voltage

600

V_GES

Gate- Emitter Voltage

±30

Collector Current

20*

10*

30*

10*

30*

I_C

Collector Current @T_C= 100 °C

I_Cplus

Pulsed Collector Current，t_plimited by T_jmax

turn off safe operating area，VCE=600V，Tj=150℃

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current

I_F

I_FM

Power Dissipation @ T_C= 25°C

℃

P_D

Power Dissipation @T_C= 100 °C

13.2

T_J,T_stg

T_L

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

-55 to +150

260

Short circuit withstand time V_GE=15.0V, V_CC≤400V,

Allowed number of short circuits<1000Time between

short circuits:≥1.0s,T_j≤150℃

t_sc

Wuxi NCE Power Co., Ltd

Page

V1.0

http://www.ncepower.com

12 3 4 5 6 7...10

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