Datasheet > NCE100TD120VTP

NCE100TD120VTP

更新时间： 2024-11-24 17:02:03

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关双极性晶体管
页数	文件大小	规格书
10页	1617K
描述
新洁能提供击穿电压等级范围为1200V至1350V的N沟道IGBT器件。通过工艺与器件结构优化，新洁能提供高能效的IGBT产品。在导通压降与开关损耗之间做出了良好的权衡，能够大幅度提高系统效率。同

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NCE100TD120VTP 数据手册

Pb Free Product

NCE100TD120VTP

1200V, 100A, Trench FS II Fast IGBT

General Description

Using NCE's proprietary trench design and advanced FS (Field Stop) second

generation technology, the 1200V Trench FSII IGBT offers superior conduction and

switching performances, and easy parallel operation;

Features

 Trench FSII Technology Offering

 Very low V_CE(sat)

 High speed switching

 Positive temperature coefficient in V_CE(sat)

 Very tight parameter distribution

 High ruggedness, temperature stable behavior

Schematic diagram

Application

 PV power

 Three-level Solar String Inverter

 UPS

Package Marking and Ordering Information

Device

Device Package

Device Marking

NCE100TD120VTP

TO-247P

NCE100TD120VTP

TO-247P

Absolute Maximum Ratings (T_C=25°C unless otherwise noted)

Symbol

V_CES

Parameter

Value

Units

Collector-Emitter Voltage

1200

±30

V_GES

Gate- Emitter Voltage

Collector Current

200

I_C

Collector Current @T_C= 100 °C

100

I_Cpuls

Pulsed Collector Current，t_plimited by T_jmax

Turn off safe operating area，V_CE=1200V，T_j=175°C

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current

400

I_F

100

I_FM

400

Power Dissipation @ T_C= 25°C

937

°C

P_D

Power Dissipation @T_C= 100 °C

468.5

-55 to +175

260

T_J,T_stg

T_L

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

Wuxi NCE Power Co., Ltd

Page

V1.2

http://www.ncepower.com

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