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NCE0160S PDF预览

NCE0160S

更新时间: 2024-11-23 05:51:59
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 400K
描述
NCE N-Channel Enhancement Mode Power MOSFET

NCE0160S 数据手册

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Pb Free Product  
http://www.ncepower.com  
NCE0160S  
NCE N-Channel Enhancement Mode Power MOSFET  
DESCRIPTION  
The NCE0160S uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge.  
This device is suitable for use in PWM, load switching and  
general purpose applications.  
GENERAL FEATURES  
VDS = 100V,ID =60A  
Schematic diagram  
RDS(ON) <14m@ VGS=10V  
Special designed for Convertors and power controls  
High density cell design for ultra low Rdson  
Fully characterized Avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Marking and pin Assignment  
Application  
Power switching application  
Hard Switched and High Frequency Circuits  
Uninterruptible Power Supply  
100% UIS TESTED!  
PowerPAK SO-8 Bottom view  
100% ΔVds TESTED!  
Package Marking And Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE0160  
NCE0160S  
PowerPAK SO-8  
-
-
-
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter Symbol  
Limit  
100  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
VDS  
VGS  
±25  
V
60  
50  
A
A
ID  
ID (70)  
IDM  
Drain Current-Continuous(TC=70)  
Pulsed Drain Current  
80  
A
Maximum Power Dissipation  
105  
W
PD  
Peak diode recovery voltage  
dv/dt  
V/ns  
W/℃  
mJ  
Derating factor  
0.84  
550  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 150  
TJ,TSTG  
Wuxi NCE Power Semiconductor Co., Ltd  
Page 1  
v1.0  

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