Datasheet > NCE01P30L*

NCE01P30L*

更新时间： 2024-03-03 10:11:20

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	297K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE01P30L* 数据手册

http://www.ncepower.com

NCE01P30L

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE01P30L uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge. It can be

used in a wide variety of applications. It is ESD protested.

General Features

● V_DS=-100V,I_D=-30A

Schematic diagram

R_DS(ON)<58mΩ @ V_GS=-10V (Typ:50mΩ)

● Super high dense cell design

● Advanced trench process technology

● Reliable and rugged

● High density cell design for ultra low On-Resistance

Application

● Portable equipment and battery powered systems

Marking and pin assignment

TO-251S top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE01P30L

TO-251S

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

-100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

-30

-21

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

-120

Maximum Power Dissipation

Derating factor

120

W/℃

℃

P_D

0.8

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page 1

v2.0

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