Datasheet > NCE0202M

NCE0202M

更新时间： 2024-04-09 19:00:25

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
8页	742K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE0202M 数据手册

http://www.ncepower.com

NCE0202M

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE0202M uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS= 200V,I_D=2A

R_DS(ON)< 580mΩ @ V_GS=10V (Typ:520mΩ)

R_DS(ON)< 600mΩ @ V_GS=10V (Typ:540mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Schematic diagram

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

SOT-89 -3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

0202M

NCE0202M

SOT-89-3L

Ø180mm

12mm

1000 units

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

200

Gate-Source Voltage

±20

VGS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_D

I_DM

Maximum Power Dissipation

1.5

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

83.3

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=200V,V_GS=0V

200

μA

Wuxi NCE Power Co., Ltd

Page 1

v2.0

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