Datasheet > NCE01P03S*

NCE01P03S*

更新时间： 2024-03-03 10:10:36

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	350K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE01P03S* 数据手册

Pb Free Product

http://www.ncepower.com

NCE01P03S

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE01P03S uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It can

be used in a wide variety of applications. It is ESD protested.

General Features

● V_DS=-100V,I_D=-3A

Schematic diagram

R_DS(ON)<200mΩ @ V_GS=-10V (Typ:170mΩ)

R_DS(ON)<230mΩ @ V_GS=-4.5V (Typ:200mΩ)

● Super high dense cell design

● Advanced trench process technology

● Reliable and rugged

● High density celldesign for ultra low on-resistance

Application

● Power switch

Marking and pin assignment

● DC/DC converters

SOP-8 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

4000 units

NCE01P03S

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter Symbol

Limit

-100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

-3

-2.1

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

-20

Maximum Power Dissipation

2.5

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v1.0

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