Datasheet > NCE01H10

NCE01H10

更新时间： 2024-04-09 18:59:27

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	648K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE01H10 数据手册

http://www.ncepower.com

NCE01H10

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE01H10 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS= 100V,I_D=100A

R_DS(ON)< 12mΩ @ V_GS=10V (Typ:9.9mΩ)

Schematic diagram

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Marking and pin assignment

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

100% UIS TESTED!

100% ΔVds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE01H10

TO-220-3L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Symbol

VDS

Parameter

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

100

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(TC=100℃)

Pulsed Drain Current

380

Maximum Power Dissipation

200

P_D

Derating factor

1.33

W/℃

℃

E_AS

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

720

-55 To 175

T_J,T_STG

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

V2.0

12 3 4 5 6 7

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