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NCE01P18* PDF预览

NCE01P18*

更新时间: 2024-04-09 19:00:27
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
7页 713K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE01P18* 数据手册

 浏览型号NCE01P18*的Datasheet PDF文件第2页浏览型号NCE01P18*的Datasheet PDF文件第3页浏览型号NCE01P18*的Datasheet PDF文件第4页浏览型号NCE01P18*的Datasheet PDF文件第5页浏览型号NCE01P18*的Datasheet PDF文件第6页浏览型号NCE01P18*的Datasheet PDF文件第7页 
http://www.ncepower.com  
NCE01P18  
NCE P-Channel Enhancement Mode Power MOSFET  
Description  
The NCE01P18 uses advanced trench technology and design  
to provide excellent RDS(ON) with low gate charge. It can be used  
in a wide variety of applications. It is ESD protested.  
General Features  
VDS =-100V,ID =-18A  
Schematic diagram  
RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)  
Super high dense cell design  
Advanced trench process technology  
Reliable and rugged  
High density cell design for ultra low On-Resistance  
Marking and pin assignment  
Application  
Power management in notebook computer  
Portable equipment and battery powered systems  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-220-3L top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE01P18  
NCE01P18  
TO-220-3L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-100  
±20  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
VGS  
-18  
-12  
-72  
170  
70  
A
A
ID  
ID (100)  
IDM  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
A
Single pulse avalanche energy (Note 5)  
Maximum Power Dissipation  
EAS  
mJ  
W
PD  
Derating factor  
0.56  
W/℃  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Wuxi NCE Power Co., Ltd  
Page1  
V3.0  

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