http://www.ncepower.com
NCE01P18D
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P18K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in a wide variety of applications. It is ESD protested.
General Features
● VDS =-100V,ID =-18A
Schematic diagram
RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
RDS(ON) <120mΩ @ VGS=-10V (Typ:95mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
Application
● Power management in notebook computer
Marking and pin assignment
● Portable equipment and battery powered systems
100% UIS TESTED!
100% ΔVds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE01P18D
NCE01P18D
TO-263-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
-100
±20
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VGS
-18
-12
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
-72
A
Single pulse avalanche energy (Note 5)
Maximum Power Dissipation
EAS
170
mJ
W
70
PD
Derating factor
0.56
W/℃
℃
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc
RθJA
2.14
60
℃/W
℃/W
Thermal Resistance,Junction-to-Ambient (Note 2)
Wuxi NCE Power Co., Ltd
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