Datasheet > NCE0157D

NCE0157D

更新时间： 2024-11-23 10:28:39

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	338K
描述
NCE N-Channel Enhancement Mode Power MOSFET

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NCE0157D 数据手册

Pb Free Product

http://www.ncepower.com

NCE0157D

NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The NCE0157D uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. It can be used in a wide variety of applications.

GENERAL FEATURES

● V_DS= 100V,I_D=57A

R_DS(ON)< 23mΩ @ V_GS=10V

Schematic diagram

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Application

●

Power switching application

Marking and pin Assignment

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

TO-263-2L top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE0157D

TO-263-2L

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

V^GS

±20

I_D

Drain Current-Continuous@ Current-Pulsed (Note 1)

I_D(100℃)

I_DM

210

200

1.61

580

Maximum Power Dissipation

P_D

Derating factor

W/℃

℃

Single pulse avalanche energy (Note 5)

Operating Junction and Storage Temperature Range

E_AS

-55 To 150

T_J,T_STG

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

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